Hybrid density functional theory study of substitutional Gd in ?-Ga2O3

被引:6
作者
Welch, Eric [1 ]
Borges, Pablo [2 ]
Scolfaro, Luisa [1 ]
机构
[1] Texas State Univ, Dept Phys, San Marcos, TX 78666 USA
[2] Univ Fed Vicosa, Rio Paranaiba, MG, Brazil
关键词
Gadolinium gallium oxide alloys; Density functional theory; f-Orbital material modeling; Neutral alloy formation energy; TOTAL-ENERGY CALCULATIONS; ULTRASOFT PSEUDOPOTENTIALS; ELECTRONIC-PROPERTIES; MAGNETIC-PROPERTIES; 1ST PRINCIPLES; GA2O3; GAP;
D O I
10.1016/j.physb.2022.414558
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Substitutional Gd alloying in beta-Ga2O3 is studied using hybrid density functional theory. Calculations of structural properties reveal a monotonic increase in lattice parameters, volume and interplanar spacing with increasing Gd content. Cohesive energy and formation energy calculations show monotonically decreasing energy for increased Gd concentrations, implying stability even for large concentration Gd alloying. Partial density of states and electronic band structures reveal that Gd substitution does not result in any inter band gap states, a requirement for p-type conductivity. The electronic band gap does, however, decrease with increasing Gd content where the pronounced Gd levels are deep lying f-orbital electronic states. The frequency dependent dielectric response spectra reveal spatial anisotropy and a red shift for all optical properties for Gd content up to 37.5%, which, coupled with the electronic structure results show how Gd alloying may be used to tune Ga2O3 without signif-icantly modifying the band edge contributions.
引用
收藏
页数:8
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共 52 条
[41]   Preparations, properties and applications of gallium oxide nanomaterials - A review [J].
Shi, Feng ;
Qiao, Hengyang .
NANO SELECT, 2022, 3 (02) :348-373
[42]   The dawn of Ga2O3 HEMTs for high power electronics - A review [J].
Singh, R. ;
Lenka, T. R. ;
Panda, D. K. ;
Velpula, R. T. ;
Jain, B. ;
Bui, H. Q. T. ;
Nguyen, H. P. T. .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2020, 119
[43]   Indium Gallium Oxide Alloys: Electronic Structure, Optical Gap, Surface Space Charge, and Chemical Trends within Common-Cation Semiconductors [J].
Swallow, Jack E. N. ;
Palgrave, Robert G. ;
Murgatroyd, Philip A. E. ;
Regoutz, Anna ;
Lorenz, Michael ;
Hassa, Anna ;
Grundmann, Marius ;
von Wenckstern, Holger ;
Varley, Joel B. ;
Veal, Tim D. .
ACS APPLIED MATERIALS & INTERFACES, 2021, 13 (02) :2807-2819
[44]   Recent advances in the growth of gallium oxide thin films employing various growth techniques-a review [J].
Tak, B. R. ;
Kumar, Sudheer ;
Kapoor, A. K. ;
Wang, Danhao ;
Li, Xiaohang ;
Sun, Haiding ;
Singh, R. .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2021, 54 (45)
[45]   Electronic structure and optical property of metal-doped Ga2O3: a first principles study [J].
Tang, Cheng ;
Sun, Jie ;
Lin, Na ;
Jia, Zhitai ;
Mu, Wenxiang ;
Tao, Xutang ;
Zhao, Xian .
RSC ADVANCES, 2016, 6 (82) :78322-78334
[46]   Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure [J].
Usseinov, Abay ;
Koishybayeva, Zhanymgul ;
Platonenko, Alexander ;
Pankratov, Vladimir ;
Suchikova, Yana ;
Akilbekov, Abdirash ;
Zdorovets, Maxim ;
Purans, Juris ;
Popov, Anatoli I. .
MATERIALS, 2021, 14 (23)
[47]   Vertical β-Ga2O3 Power Transistors: A Review [J].
Wong, Man Hoi ;
Higashiwaki, Masataka .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (10) :3925-3937
[48]   Gallium oxide solar-blind ultraviolet photodetectors: a review [J].
Xu, Jingjing ;
Zheng, Wei ;
Huang, Feng .
JOURNAL OF MATERIALS CHEMISTRY C, 2019, 7 (29) :8753-8770
[49]   Effect of Gd-Doping on Structural, Optical, and Magnetic Properties of NiFe2O4 As-prepared Thin Films via Facile Sol-Gel Approach [J].
Yao, Huixue ;
Ning, Xueer ;
Zhao, Hong ;
Hao, Aize ;
Ismail, Muhammad .
ACS OMEGA, 2021, 6 (09) :6305-6311
[50]   Density functional calculations for structural, electronic, and magnetic properties of gadolinium-oxide clusters [J].
Yuan, H. K. ;
Chen, H. ;
Tian, C. L. ;
Kuang, A. L. ;
Wang, J. Z. .
JOURNAL OF CHEMICAL PHYSICS, 2014, 140 (15)