Hybrid density functional theory study of substitutional Gd in ?-Ga2O3

被引:4
作者
Welch, Eric [1 ]
Borges, Pablo [2 ]
Scolfaro, Luisa [1 ]
机构
[1] Texas State Univ, Dept Phys, San Marcos, TX 78666 USA
[2] Univ Fed Vicosa, Rio Paranaiba, MG, Brazil
关键词
Gadolinium gallium oxide alloys; Density functional theory; f-Orbital material modeling; Neutral alloy formation energy; TOTAL-ENERGY CALCULATIONS; ULTRASOFT PSEUDOPOTENTIALS; ELECTRONIC-PROPERTIES; MAGNETIC-PROPERTIES; 1ST PRINCIPLES; GA2O3; GAP;
D O I
10.1016/j.physb.2022.414558
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Substitutional Gd alloying in beta-Ga2O3 is studied using hybrid density functional theory. Calculations of structural properties reveal a monotonic increase in lattice parameters, volume and interplanar spacing with increasing Gd content. Cohesive energy and formation energy calculations show monotonically decreasing energy for increased Gd concentrations, implying stability even for large concentration Gd alloying. Partial density of states and electronic band structures reveal that Gd substitution does not result in any inter band gap states, a requirement for p-type conductivity. The electronic band gap does, however, decrease with increasing Gd content where the pronounced Gd levels are deep lying f-orbital electronic states. The frequency dependent dielectric response spectra reveal spatial anisotropy and a red shift for all optical properties for Gd content up to 37.5%, which, coupled with the electronic structure results show how Gd alloying may be used to tune Ga2O3 without signif-icantly modifying the band edge contributions.
引用
收藏
页数:8
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共 52 条
  • [1] Bandgap bowing parameter and alloy fluctuations for β-(AlxGa1-x)2O3 alloys for x ≤ 0.35 determined from low temperature optical reflectivity
    Bhattacharjee, Jayanta
    Ghosh, Sahadeb
    Pokhriyal, Preeti
    Gangwar, Rashmi
    Dutt, Rajeev
    Sagdeo, Archna
    Tiwari, Pragya
    Singh, S. D.
    [J]. AIP ADVANCES, 2021, 11 (07)
  • [2] Review of gallium-oxide-based solar-blind ultraviolet photodetectors
    Chen, Xuanhu
    Ren, Fangfang
    Gu, Shulin
    Ye, Jiandong
    [J]. PHOTONICS RESEARCH, 2019, 7 (04) : 381 - 415
  • [3] Cullity B. D., ELEMENTS XRAY DIFFRA
  • [4] A review of β-Ga2O3 single crystal defects, their effects on device performance and their formation mechanism
    Fu, Bo
    Jia, Zhitai
    Mu, Wenxiang
    Yin, Yanru
    Zhang, Jian
    Tao, Xutang
    [J]. JOURNAL OF SEMICONDUCTORS, 2019, 40 (01)
  • [5] Ganose A. M., 2018, J OPEN SOURCE SOFTWA, V3, P717, DOI [10.21105/joss.00717, DOI 10.21105/JOSS.00717]
  • [6] β-Gallium oxide power electronics
    Green, Andrew J.
    Speck, James
    Xing, Grace
    Moens, Peter
    Allerstam, Fredrik
    Gumaelius, Krister
    Neyer, Thomas
    Arias-Purdue, Andrea
    Mehrotra, Vivek
    Kuramata, Akito
    Sasaki, Kohei
    Watanabe, Shinya
    Koshi, Kimiyoshi
    Blevins, John
    Bierwagen, Oliver
    Krishnamoorthy, Sriram
    Leedy, Kevin
    Arehart, Aaron R.
    Neal, Adam T.
    Mou, Shin
    Ringel, Steven A.
    Kumar, Avinash
    Sharma, Ankit
    Ghosh, Krishnendu
    Singisetti, Uttam
    Li, Wenshen
    Chabak, Kelson
    Liddy, Kyle
    Islam, Ahmad
    Rajan, Siddharth
    Graham, Samuel
    Choi, Sukwon
    Cheng, Zhe
    Higashiwaki, Masataka
    [J]. APL MATERIALS, 2022, 10 (02)
  • [7] Gribisch P., 2019, ECS Transactions, V93, P57, DOI 10.1149/09301.0057ecst
  • [8] Review of Ga2O3-based optoelectronic devices
    Guo, D.
    Guo, Q.
    Chen, Z.
    Wu, Z.
    Li, P.
    Tang, W.
    [J]. MATERIALS TODAY PHYSICS, 2019, 11
  • [9] Experimental and Theoretical Study of the Electronic Structures of Lanthanide Indium Perovskites LnInO3
    Hartley, P.
    Egdell, R. G.
    Zhang, K. H. L.
    Hohmann, M., V
    Piper, L. F. J.
    Morgan, D. J.
    Scanlon, D. O.
    Williamson, B. A. D.
    Regoutz, A.
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 125 (11) : 6387 - 6400
  • [10] Haynes W. M., 2015, CRC HDB CHEM PHYS