Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (100) β-Ga2O3 thin films using in-situ reflectance spectroscopy

被引:6
作者
Chou, Ta-Shun [1 ]
Bin Anooz, Saud [1 ]
Grueneberg, Raimund [1 ]
Thuy Vi Thi Tran [1 ]
Rehm, Jana [1 ]
Galazka, Zbigniew [1 ]
Popp, Andreas [1 ]
机构
[1] Leibniz Inst Kristallzuchtung IKZ, Max Born Str 2, D-12489 Berlin, Germany
关键词
A1; Surfaces; A3; Metalorganic vapor phase epitaxy; B1; Gallium compounds; STATIC DIELECTRIC-CONSTANT; ANISOTROPY SPECTROSCOPY; REFRACTIVE-INDEX; SINGLE-CRYSTALS; TEMPERATURE; GAP;
D O I
10.1016/j.jcrysgro.2022.127003
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
We investigate Si-doped beta-Ga2O3layers grown by metalorganic vapor phase epitaxy (MOVPE) on (100)beta-Ga2O3 semi-insulating substrates with the reflection spectrum incident normally onto the substrate surface. The reflectance spectrum transformed into the autocorrelation domain shows a more pronounced Fabry-Pe ' rot oscillation than the raw spectrum, from which one can easily estimate the growth rate and the growth mode based on the period, and the damping behavior of the spectrum, respectively. The observed oscillation con-tributes to the refractive index difference between the bulk substrate and the grown film caused by the incor-porated impurities and different preparation techniques. The high sensitivity of the reflectance spectroscopy is demonstrated to be an advantage as a powerful growth process monitoring tool.
引用
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页数:6
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