The effect of the barrier thickness on DC and RF performances of AlGaN/GaN HEMTs on silicon

被引：1
作者：
Wang, Chun [1 ]
Hsu, Heng-Tung [2 ]
Lin, Jui-Lung [2 ]
Weng, You-Chen [3 ]
Tsao, Yi-Fan [2 ]
Wang, Yuan [2 ]
Chang, Edward Yi [1 ,2 ,4 ]
机构：
[1] Natl Yang Ming Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan
[2] Natl Yang Ming Chiao Tung Univ, Int Coll Semicond Technol, Hsinchu 30010, Taiwan
[3] Natl Yang Ming Chiao Tung Univ, Coll Photon, Tainan 71150, Taiwan
[4] Natl Yang Ming Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2023年 / 38卷 / 07期
关键词：
barrier thickness; GaN HEMT; AlGaN; dispersive effect; small signal; large signal; Si substrate; ELECTRON-MOBILITY TRANSISTORS; SMALL-SIGNAL; GAN HEMTS; ALD AL2O3; 40; GHZ; POWER; TECHNOLOGY; SI; F(T)/F(MAX); PASSIVATION;
D O I：
10.1088/1361-6641/acd13c
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, the effect of barrier thickness on the DC and RF performances of AlGaN/GaN high-electron mobility transistors (HEMTs) on silicon for millimeter wave applications is experimentally investigated. GaN HEMT devices with different barrier thicknesses were fabricated and characterized. While the device with the thinnest barrier exhibited the highest extrinsic transconductance (g(m)) resulting from the shortest gate-to-channel distance, such configuration suffered from the lowest unit current-gain cut-off frequency (f(T)) due to the increase of the total gate capacitance. Moreover, degradation in the output power was observed for devices with thinner barriers. Such degradation was related to the severe knee walkout as evidenced from drain-lag characterization.
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页数：8
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