Fourier Transform Infrared Reflection Anisotropy Spectroscopy of Semiconductor Crystals and Structures: Development and Application in the Mid-Infrared

A new method of reflection anisotropy spectroscopy (RAS) with increased mid-IR efficiency owing to the use of a Fourier transform infrared (FT-IR) spectrometer has been developed. An optical setup was implemented using a photoelastic modulator (PEM) to modulate the direction of linear polarization of the probe beam originating from the Michelson interferometer. An original measurement algorithm was proposed to eliminate the influence of spectral inhomogeneity of the PEM efficiency on the obtained spectra using appropriate calibration. It was shown that to preserve the sign of the RAS signal, it is necessary to use a specialized procedure for phase correction of the interferogram registered by the FT-IR spectrometer. In the visible range, good agreement was confirmed between the obtained reflection anisotropy (RA) spectra of a semiconductor crystal and the results of independent measurements using a conventional diffraction-grating spectrometer-based setup. The RA spectrum of a III-V semiconductor heterostructure in the mid-infrared range (lambda up to 8 mu m) is demonstrated. Application of the developed FT-IR RAS method to layered black phosphorus has enabled characterization of anisotropic interband transitions in this graphene-like semiconductor crystal.