MBE growth of SnTe films on GaAs substrates with ZnTe buffer layers

SnTe (100) single-domain thin films have been previously grown on GaAs substrates by molecular beam epitaxy but obtaining excellent crystallinity can be difficult. In this paper, ZnTe buffer layers are introduced to improve the crystallinity of SnTe films. The effects of the molecular beam flux ratio (JTe/JSn) and growth temperature (Tg) on the crystallinity are investigated to achieve high-quality layers. The surface morphology and electrical properties of the SnTe thin films are also evaluated in addition to the conventional X-ray diffraction (XRD) measurements. The crystallographic properties of the grown samples are shown to be significantly improved by introducing a ZnTe buffer layer. XRD (theta-2 theta) full width at half maximum of the lowest value obtained so far is about 0.14 degrees. It is also found that lowering JTe/JSn to 0.6 results in a reduced growth rate, and an increased growth temperature (Tg = 220 degrees C) promotes the migration of atoms at the growth front. Both effects contribute to improvement in the crystallographic quality, including the layer surface smoothness. The cross-sectional transmission electron microscopy observation of the sample indicates the abrupt interface formation with different lattice structures. It is also found that low growth temperatures (below 200 degrees C) are not favorable for the SnTe layer growth, which is confirmed by the surface morphology.