共 36 条
- [1] DEPENDENCE OF RAMAN FREQUENCIES AND SCATTERING INTENSITIES ON PRESSURE IN GASB, INAS, AND INSB SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1984, 30 (02): : 681 - 687
- [2] High-pressure phase of GaP: Structure and chemical ordering [J]. PHYSICAL REVIEW B, 2007, 76 (06):
- [5] HIGH-PRESSURE PHASE-TRANSITION AND PHASE-DIAGRAM OF GALLIUM-ARSENIDE [J]. PHYSICAL REVIEW B, 1991, 44 (09): : 4214 - 4234
- [6] New Developments in the Physical Chemistry of Shock Compression [J]. ANNUAL REVIEW OF PHYSICAL CHEMISTRY, VOL 62, 2011, 62 : 575 - 597
- [8] Phonon response of AlxGa1-xSb/GaSb epitaxial layers by Fourier-transform infrared-reflectance and Raman spectroscopies [J]. PHYSICAL REVIEW B, 1997, 56 (12): : 7549 - 7553
- [9] REDUCTION OF SHEAR-STRENGTH AND PHASE-TRANSITION IN SHOCK-LOADED SILICON [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (06): : L369 - L371
- [10] He S., 2020, SCI ADV, V6, P15