BiSBr, an Anisotropic One-Dimensional Chalcohalide Used for Radiographic Detection

As a chalcohalide compound, BiSBr has been regarded as a potential semiconductor material for radiation detection. BiSBr has a wide band gap of 1.90 eV, and it crystallizes in a one-dimensional chain structure. Because of their intrinsic electronic crosstalk prevention ability, BiSBr crystals exhibit intriguing application prospects in the field of X-ray detection. In this study, we explored proper conditions of the Bridgman method to obtain pure phase crystal ingots. BiSBr crystal ingots were grown in a Bridgman furnace at an appropriate growth rate. The ingots exhibit a one-dimensional needlelike structure and anisotropic electronic properties. The I-V measurement yields a resistivity of similar to 10(8) Omega<middle dot>cm. Further, the ingots show appreciable responses of X-ray. The intrinsic anti-interference structure of BiSBr will provide a promising application to enhance X-ray imaging performance.