Full-Band Monte Carlo Study of Hot Carriers for Advection-Diffusion Monte Carlo Simulations

被引：0

作者：

Helleboid, Remi ^{[1
,2
]}

Saint-Martin, Jerome ^{[1
]}

Pala, Marco ^{[1
]}

Dollfus, Philippe ^{[1
]}

Mugny, Gabriel ^{[3
]}

Nicholson, Isobel ^{[4
]}

Rideau, Denis ^{[3
]}

机构：

[1] Univ Paris Saclay, C2N, CNRS, Palaiseau, France

[2] STMicroelectronics, Palaiseau, France

[3] STMicroelectronics, Crolles, France

[4] STMicroelectronics, Edinburgh, Midlothian, Scotland

来源：

2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD | 2023年

关键词：

electronic transport; full-band Monte Carlo; SPAD; diffusion; avalanche; photodiode; HIGH-FIELD DIFFUSION; ELECTRONS;

D O I：

10.23919/SISPAD57422.2023.10319557

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Diffusion of carriers under high electric field is studied using full-band Monte Carlo simulations. The diffusion of hot carriers is found to be strongly anisotropic with respect to the electric field direction and to be times higher than the one predicted by the Einstein's law. A new calibration of analytical models is proposed to account for the anisotropy of the diffusion coefficient as well of the impact of the electric field. The effect of the new model is illustrated by studying its impact on the lateral and longitudinal spread of the electronic avalanches that occur in single-photon avalanche diodes, using advection-diffusion Monte Carlo.

引用

页码：369 / 372

页数：4

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