Effect of silver doping on sol-gel synthesized RuAgxOy-based extended-gate field-effect transistor flexible sensor device

被引:2
作者
Palit, Sayani [1 ]
Her, Jim-Long [2 ]
Pang, See-Tong [3 ]
Pan, Tung-Ming [1 ,3 ]
机构
[1] Chang Gung Univ, Dept Elect Engn, Taoyuan 33302, Taiwan
[2] Chang Gung Univ, Ctr Gen Educ, Div Nat Sci, Taoyuan 333, Taiwan
[3] Chang Gung Mem Hosp, Div Urol, Taoyuan 33305, Taiwan
关键词
Extended-gate field-effect transistor (EGFET); RuAgxOy; PH sensor; Flexible substrate; Sol-gel; PH SENSOR; ELECTRODES; SUBSTRATE; MEMBRANE; FILM; AG;
D O I
10.1016/j.sna.2023.114392
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the rising importance of pH detection in biomedical diagnostic applications and environmental monitoring systems, it is crucial to develop a highly efficient, cost-effective, and stable electrochemical pH sensor device. This study reports the effect of silver doping on the structural properties and electrical characteristics of the RuAgxOy films for an EGFET (extended-gate field-effect transistor) sensor. The RuAgxOy sensing film was fabricated by a sol-gel spin coating technique using different silver doping concentrations, i.e. 1, 3 and 5 mol%. These synthesized RuAgxOy films were determined by X-ray diffraction, atomic force microscopy, X-ray photo-electron spectroscopy, and energy-dispersive X-ray spectroscopy with elemental mapping to study their struc-tural properties, surface morphologies, chemical characteristics as well as their compositions and elemental distributions, respectively. The RuAgxOy sensor treated at an Ag doping concentration of 3 mol% showed a pH sensitivity of 61.38 mV/pH over the pH 2-12 range with an outstanding linearity of 0.996. This fabricated sensor exhibited an excellent reversibility associated with a lower hysteresis voltage of 3 mV and a smaller drift rate of 0.23 mV/h. Furthermore, the pH sensing performance of the RuAgxOy EGFET sensor processed with the 3 mol% condition remained constant after 500 repeated bending cycles. These results suggested that the smaller grain size, finer surface, and the presence of the metal Ag0 with larger atomic radius provide free electrons on the surface, resulting in elevated electrical conductivity of the RuAgxOy sensing platform.
引用
收藏
页数:11
相关论文
共 54 条
  • [1] Fabrication of selective L-glutamic acid sensor in electrochemical technique from wet-chemically prepared RuO2 doped ZnO nanoparticles
    Alam, M. M.
    Uddin, M. T.
    Asiri, Abdullah M.
    Awual, Md Rabiul
    Fazal, M. A.
    Rahman, Mohammed M.
    Islam, M. A.
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2020, 251
  • [2] Alvarez-Serna Bryan E., 2021, Journal of Physics: Conference Series, V1723, DOI 10.1088/1742-6596/1723/1/012024
  • [4] X-ray photoelectron spectroscopy and micro-Raman analysis of conductive RuO2 thin films
    Bhaskar, S
    Dobal, PS
    Majumder, SB
    Katiyar, RS
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) : 2987 - 2992
  • [5] Bielmann M, 2002, PHYS REV B, V65, DOI 10.1103/PhysRevB.65.235431
  • [6] Ru-Ag and Ru-Au dicarbene complexes from an abnormal carbene ruthenium system
    Bitzer, Mario J.
    Poethig, Alexander
    Jandl, Christian
    Kuehn, Fritz E.
    Baratta, Walter
    [J]. DALTON TRANSACTIONS, 2015, 44 (26) : 11686 - 11689
  • [7] COMPARISON OF THE HYSTERESIS OF TA2O5 AND SI3N4 PH-SENSING INSULATORS
    BOUSSE, L
    MOSTARSHED, S
    VANDERSCHOOT, B
    DEROOIJ, NF
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 1994, 17 (02) : 157 - 164
  • [8] Highly dispersed Ag/TiO2 via adsorptive self-assembly for bactericidal application
    Cao, Chongjiang
    Huang, Jingcheng
    Li, Li
    Zhao, Chanjuan
    Yao, Jianfeng
    [J]. RSC ADVANCES, 2017, 7 (22) : 13347 - 13352
  • [9] Selective Hydrogenation of m-Dinitrobenzene to m-Nitroaniline over Ru-SnOx/Al2O3 Catalyst
    Cheng, Haiyang
    Lin, Weiwei
    Li, Xiaoru
    Zhang, Chao
    Zhao, Fengyu
    [J]. CATALYSTS, 2014, 4 (03): : 276 - 288
  • [10] Study on extended gate field effect transistor with tin oxide sensing membrane
    Chi, LL
    Chou, JC
    Chung, WY
    Sun, TP
    Hsiung, SK
    [J]. MATERIALS CHEMISTRY AND PHYSICS, 2000, 63 (01) : 19 - 23