Dynamic Behavior of Threshold Voltage and ID-VDS Kink in AlGaN/GaN HEMTs Due to Poole-Frenkel Effect

被引：2

作者：

Gao, Zhan ^{[1
]}

De Santi, Carlo ^{[1
]}

Rampazzo, Fabiana ^{[1
]}

Saro, Marco ^{[1
]}

Fornasier, Mirko ^{[1
]}

Meneghesso, Gaudenzio ^{[1
]}

Meneghini, Matteo ^{[2
,3
]}

Chini, Alessandro ^{[4
]}

Verzellesi, Giovanni ^{[5
]}

Zanoni, Enrico ^{[1
]}

机构：

[1] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[2] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy

[3] Univ Padua, Dept Phys & Astron, I-35131 Padua, Italy

[4] Univ Modena & Reggio Emilia, Dept Engn Enzo Ferrari, I-41126 Modena, Italy

[5] Univ Modena & Reggio Emilia, Dept Sci & Methods Engn, I-41126 Modena, Italy

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2023年 / 70卷 / 12期

基金：

欧盟地平线“2020”;

关键词：

Current collapse; deep levels; GaN HEMT; GaN reliability; kink effect; ELECTRON-EMISSION; SURFACE-STATES; R-ON; GAN; FIELD; TRANSCONDUCTANCE; IMPACT; TRAPS; SI3N4; MODEL;

D O I：

10.1109/TED.2023.3326781

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The kink effect in field-effect transistors (FETs) consists in a sudden increase in drain current, I-D, during a drain voltage sweep and leading to a higher I-D saturation value. We report new experimental data concerning the dynamic behavior of the "kink" in AlGaN/GaN HEMTs and correlate them with deep levels. The results demonstrate the role of the Poole-Frenkel effect in determining the occurrence of the kink and identify the experimental conditions that make it observable.

引用

页码：6256 / 6261

页数：6

共 13 条

[1] Influence of Current Collapse due to Vds Bias Effect on GaN-HEMTs Id-Vds Characteristics in Saturation Region
Lu, Xuyang
Videt, Arnaud
Li, Ke
Faramehr, Soroush
Igic, Petar
Idir, Nadir
2022 24TH EUROPEAN CONFERENCE ON POWER ELECTRONICS AND APPLICATIONS (EPE'22 ECCE EUROPE), 2022,
[2] Incorporation of the Virtual Gate Effect and Consequences of its Neglect in the Simulation of ON-state ID-VDS Curves of AlGaN/GaN HEMTs
Dasari, Pradeep
Sharma, Chandan
Karmalkar, Shreepad
2018 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2018, : 98 - 101
[3] Experimental and numerical investigation of Poole-Frenkel effect on dynamic R ON transients in C-doped p-GaN HEMTs
Zagni, Nicolo
Cioni, Marcello
Iucolano, Ferdinando
Moschetti, Maurizio
Verzellesi, Giovanni
Chini, Alessandro
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2022, 37 (02)
[4] A Threshold Voltage Model for Charge Trapping Effect of AlGaN/GaN HEMTs
Jia, Yonghao
Wen, Zhang
Chen, Yongbo
Xie, Cheng-Cheng
Guo, Yong-Xin
Xu, Yuehang
IEEE ACCESS, 2019, 7 : 120638 - 120647
[5] THE TEMPERATURE AND COMPENSATION DEPENDENCE OF THE THRESHOLD VOLTAGE FOR SWITCHING EFFECT DUE TO THE POOLE-FRENKEL AND SCREENING EFFECTS WITH APPLICATION TO CHROMIUM DOPED GAAS STRUCTURES
HRIVNAK, L
DUBECKY, F
ACTA PHYSICA SLOVACA, 1980, 30 (03) : 233 - 241
[6] Design guidelines suppressing dynamic punch-through in GaN vertical MOSFETs by considering the Poole-Frenkel effect
Rokuno, Shohei
Suda, Jun
APPLIED PHYSICS EXPRESS, 2021, 14 (02)
[7] Analytical Model for Schottky Barrier Height and Threshold Voltage of AlGaN/GaN HEMTs With Piezoelectric Effect
Eshetu Muhea, Wondwosen
Yigletu, Fetene Mulugeta
Cabre-Rodon, Roger
Iniguez, Benjamin
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (03) : 901 - 907
[8] Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
Qi, Yongle
Wang, Denggui
Zhou, Jianjun
Zhang, Kai
Kong, Yuechan
Wu, Suzhen
Chen, Tangsheng
NANOTECHNOLOGY AND PRECISION ENGINEERING, 2020, 3 (04) : 241 - 243
[9] Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates
Yongle Qi
Denggui Wang
Jianjun Zhou
Kai Zhang
Yuechan Kong
Suzhen Wu
Tangsheng Chen
Nanotechnology and Precision Engineering, 2020, 3 (04) : 241 - 243
[10] Modeling Buffer-Related Charge Trapping Effect by Using Threshold Voltage Shifts in AlGaN/GaN HEMTs
Jia, Yonghao
Xu, Yuehang
Guo, Yongxin
2018 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM - IMS, 2018, : 724 - 727

← 1 2 →