Van der Waals heterostructure of Bi2O2Se/MoTe2 for high-performance multifunctional devices

Two-dimensional van der Waals heterostructures exhibit distinctive electronic and optoelectronic properties, making them promising structures for constructing advanced multifunctional devices. However, devices based on conventional charge-carrier transport mechanisms often perform only a single function, which limits its integration and performance. Here, we present a vertical van der Waals heterostructure made of Bi2O2Se and MoTe2, allowing it to act as high-performance backward diode, forward diode, photodetector and photovoltaic device at various working conditions. The applications are enabled by band-alignment switching between p-n heterostructure controlled by minority carrier diffusion and n-n heterostructure governed by the thermionic emission and tunneling-mediated processes. As a backward diode, the device displays a high reverse rectification ratio of 5.0 x 104. As a photodetector, the device demonstrates a broad spectral photoresponse ranging from ultraviolet (365 nm) to near-infrared (1050 nm). When irradiated by 532 nm laser, the photodetector shows a responsivity of up to 11.6 A/W and achieves quick response/recovery speed of 19.6/8.8 mu s. As a photovoltaics device, an external quantum efficiency of 78% and a responsivity of 0.33 A/W are observed. This study showcases the potential for high-performance multifunctional devices utilizing Bi2O2Se/MoTe2 heterostructures and provides comprehensive insights into the designed band alignment and its applications.