Quantum Spin Hall States and Topological Phase Transition in Germanene

被引：73

作者：

Bampoulis, Pantelis ^{[1
]}

Castenmiller, Carolien ^{[1
]}

Klaassen, Dennis J. ^{[1
]}

van Mil, Jelle ^{[1
]}

Liu, Yichen ^{[2
]}

Liu, Cheng-Cheng ^{[2
]}

Yao, Yugui ^{[2
]}

Ezawa, Motohiko ^{[3
]}

Rudenko, Alexander N. ^{[4
]}

Zandvliet, Harold J. W. ^{[1
]}

机构：

[1] Univ Twente, MESA Inst, Phys Interfaces & Nanomat, Drienerlolaan 5, NL-7522 NB Enschede, Netherlands

[2] Beijing Inst Technol, Ctr Quantum Phys, Sch Phys, Key Lab Adv Optoelect Quantum Architecture & Measu, Beijing 100081, Peoples R China

[3] Univ Tokyo, Dept Appl Phys, Hongo, Tokyo 1138656, Japan

[4] Radboud Univ Nijmegen, Inst Mol & Mat, Heyendaalseweg 135, NL-6525 AJ Nijmegen, Netherlands

来源：

PHYSICAL REVIEW LETTERS | 2023年 / 130卷 / 19期

基金：

国家重点研发计划; 欧洲研究理事会;

关键词：

GRAPHENE; TRANSPORT; SCHEMES; METAL;

D O I：

10.1103/PhysRevLett.130.196401

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We present the first experimental evidence of a topological phase transition in a monoelemental quantum spin Hall insulator. Particularly, we show that low-buckled epitaxial germanene is a quantum spin Hall insulator with a large bulk gap and robust metallic edges. Applying a critical perpendicular electric field closes the topological gap and makes germanene a Dirac semimetal. Increasing the electric field further results in the opening of a trivial gap and disappearance of the metallic edge states. This electric field -induced switching of the topological state and the sizable gap make germanene suitable for room -temperature topological field-effect transistors, which could revolutionize low-energy electronics.

引用

页数：6

共 67 条

[1] Germanene: the germanium analogue of graphene [J].