Plasma-enhanced chemical vapor deposition of GaxS1-x thin films: structural and optical properties

被引：1

作者：

Mochalov, Leonid ^{[1
,2
]}

Kudryashov, Mikhail ^{[2
,3
]}

Vshivtsev, Maksim ^{[2
]}

Prokhorov, Igor ^{[2
,3
]}

Kudryashova, Yuliya ^{[3
]}

Mosyagin, Pavel ^{[3
]}

Slapovskaya, Ekaterina ^{[3
]}

机构：

[1] Univ N Carolina, Charlotte, NC 28223 USA

[2] Nizhnii Novgorod State Tech Univ, Nizhnii Novgorod, Russia

[3] Lobachevsky Univ, Nizhnii Novgorod, Russia

来源：

OPTICAL AND QUANTUM ELECTRONICS | 2023年 / 55卷 / 10期

关键词：

Thin films; Gallium sulfide; PECVD; GALLIUM SULFIDE FILMS; EMISSION; GA2S3; GAS;

D O I：

10.1007/s11082-023-05165-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gallium sulfides are wide-gap materials (band gap in the range of 2.85-3.05 eV) that have great potential for applications in optoelectronics, photovoltaics, nonlinear optics, and energy storage. In this study, thin films of gallium sulfide GaxS1-x were prepared for the first time by plasma-enhanced chemical vapor deposition using a transport reaction involving chlorine. High-purity elemental gallium and sulfur were directly used as starting materials. The non-equilibrium low-temperature plasma of the RF discharge (40.68 MHz) initiated chemical transformations. The effect of plasma power on the composition, structure, surface morphology, and optical properties of the films was studied. GaxS1-x films have sufficiently high transparency in the visible and near-IR ranges (up to 70%).

引用

页数：10

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