Demonstration of a Switched Wideband GaN High-Power Amplifier for Future Space Missions

被引：2

作者：

Simons, Rainee N. ^{[1
]}

Downey, Joseph A. ^{[1
]}

Schoenholz, Bryan L. ^{[1
]}

Piasecki, Marie T. ^{[1
]}

Pham, Nang T. ^{[1
]}

Siddiqui, Mansoor K. ^{[2
]}

Bonnin, Ralph G. ^{[2
]}

机构：

[1] NASA Glenn Res Ctr, MS 54-1, Cleveland, OH 44135 USA

[2] Northrop Grumman Aerosp Syst, Redondo Beach, CA 90278 USA

来源：

2023 IEEE SPACE HARDWARE AND RADIO CONFERENCE | 2023年

关键词：

high power amplifier; gallium nitride; SATCOM; Ka-band; MMICs; interoperability; wideband; multi-missions;

D O I：

10.1109/SHaRC56958.2023.10046250

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

In this paper, we present the architecture of a Kaband switched, wideband, high efficiency gallium nitride based high-power amplifier. The architecture is validated by characterizing the driver and power amplifier chain. The measured results include Pout, Gain, PAE, RMS EVM for QPSK, Offset-QPSK, 8PSK, 16APSK, and 16QAM constellations, 3(rd) order IMD products, noise figure, and added phase noise. The wide bandwidth and high output power of the amplifier will enable future user terminals to interoperate between multiple service provider's space networks.

引用

页码：5 / 8

页数：4