Modeling and Simulation of a TFET-Based Label-Free Biosensor with Enhanced Sensitivity

被引:11
作者
Choudhury, Sagarika [1 ]
Baishnab, Krishna Lal [1 ]
Guha, Koushik [1 ]
Jaksic, Zoran [2 ]
Jaksic, Olga [2 ]
Iannacci, Jacopo [3 ]
机构
[1] Natl Inst Technol, Dept Elect & Commun Engn, Silchar 788010, India
[2] Univ Belgrade, Inst Chem Technol & Met, Natl Inst Republ Serbia, Ctr Microelect Technol, Belgrade 11000, Serbia
[3] Fdn Bruno Kessler FBK, Ctr Sensors & Devices SD, I-38123 Trento, Italy
关键词
biosensors; protein sensing; tunnel field-effect transistor; TFET; junctionless TFET; triple material gate; TCAD simulation; FIELD-EFFECT TRANSISTOR; TUNNEL-FET; PERFORMANCE ANALYSIS; GATE; DESIGN; DNA;
D O I
10.3390/chemosensors11050312
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
This study discusses the use of a triple material gate (TMG) junctionless tunnel field-effect transistor (JLTFET) as a biosensor to identify different protein molecules. Among the plethora of existing types of biosensors, FET/TFET-based devices are fully compatible with conventional integrated circuits. JLTFETs are preferred over TFETs and JLFETs because of their ease of fabrication and superior biosensing performance. Biomolecules are trapped by cavities etched across the gates. An analytical mathematical model of a TMG asymmetrical hetero-dielectric JLTFET biosensor is derived here for the first time. The TCAD simulator is used to examine the performance of a dielectrically modulated label-free biosensor. The voltage and current sensitivity of the device and the effects of the cavity size, bioanalyte electric charge, fill factor, and location on the performance of the biosensor are also investigated. The relative current sensitivity of the biosensor is found to be about 10(13). Besides showing an enhanced sensitivity compared with other FET- and TFET-based biosensors, the device proves itself convenient for low-power applications, thus opening up numerous directions for future research and applications.
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页数:21
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