Spectroscopic study of the effect of annealing temperature and atmosphere on the opto-electrical properties of sputtered ITO thin films

被引：4

作者：

Agdad, Abdelali ^{[1
]}

Tchenka, Abdelaziz ^{[1
]}

Chaik, Mounir ^{[1
]}

Hnawi, Salma Kaotar ^{[1
]}

Samba Vall, Cheikh Mohamed ^{[1
,2
]}

Nkhaili, Lahcen ^{[1
]}

Azizan, Mustapha ^{[1
]}

Ech-chamikh, Elmaati ^{[1
]}

Ijdiyaou, Youssef ^{[1
]}

机构：

[1] Cadi Ayyad Univ, Fac Sci Semlalia, Phys Dept, Nanomat Energy & Environm Lab, POB 2390, Marrakech 40000, Morocco

[2] Ibn Tofail Univ, Fac Sci Kenitra, Renewable Energy & Environm Lab, POB 133, Kenitra 40000, Morocco

来源：

BULLETIN OF MATERIALS SCIENCE | 2023年 / 46卷 / 02期

关键词：

Indium tin oxide; transparent conductive oxides; semiconductors; vacuum annealing; thin films; optoelectronics; OXIDE; DEPOSITION;

D O I：

10.1007/s12034-023-02907-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The effect of annealing temperature and atmosphere on structural, optical and electrical properties of indium tin oxide (ITO) thin films with a nanoscale thickness, grown on glass substrates by radio frequency sputtering, was investigated. X-ray diffraction, grazing incidence X-ray reflectivity, scanning electron microscopy, energy dispersive X-ray spectroscopy, optical transmission and electrical resistivity measurements were performed to study the prepared films. Under both, air and vacuum atmospheres, the films start crystallization from a temperature of 100 degrees C, and show an average transmittance of 83%. From the figure of merit, which takes into account the optical and electrical properties, it is found that the films annealed under vacuum generally show much better performance than those annealed in air.

引用

页数：7

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[11] Difference between bulk and thin film densities of metal oxide and fluoride films studied by NRA depth profiling techniques [J].