A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs

被引:8
作者
Wang, Mingyan [1 ]
Lv, Yuanjie [2 ]
Zhou, Heng [1 ]
Wen, Zuokai [1 ]
Cui, Peng [1 ]
Liu, Chao [1 ]
Lin, Zhaojun [1 ]
机构
[1] Shandong Univ, Inst Novel Semicond, Sch Microelect, Jinan 250100, Peoples R China
[2] Hebei Semicond Res Inst, Natl Key Lab Applicat Specif Integrated Circuit, Shijiazhuang 050051, Peoples R China
基金
中国国家自然科学基金;
关键词
2DEG density-velocity model; AlGaN/GaN heterojunction FETs (HFETs); electron transport; Monte Carlo (MC); MONTE-CARLO CALCULATION; GAN; VELOCITY; TRANSCONDUCTANCE; TEMPERATURE; IMPACT;
D O I
10.1109/TED.2023.3303407
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study investigates bias-dependent elec-tron and thermal transport based on the electrothermal Monte Carlo (MC) simulation with velocity-field charac-teristics obtained by a self-consistent iterative method. A peak electron velocity of 1.43 x 10(5) m/s was obtained at a drain current of 534 A/m corresponding to a channel electron density of 2.7 x 10(12) cm(-2). This behavior was found to be in good agreement with previously extracted experiments. A new 2DEG density versus electron velocity model based on polar optical phonon (POP) scattering and polarization Coulomb field (PCF) scattering is proposed to explain bias-dependent electron transport. The good agreement between experimental results and simulated current-voltage characteristics proves the accuracy of our MC simulation.
引用
收藏
页码:5479 / 5483
页数:5
相关论文
共 31 条
  • [1] Electron transport characteristics of GaN for high temperature device modeling
    Albrecht, JD
    Wang, RP
    Ruden, PP
    Farahmand, M
    Brennan, KF
    [J]. JOURNAL OF APPLIED PHYSICS, 1998, 83 (09) : 4777 - 4781
  • [2] Density-dependent electron transport and precise modeling of GaN high electron mobility transistors
    Bajaj, Sanyam
    Shoron, Omor F.
    Park, Pil Sung
    Krishnamoorthy, Sriram
    Akyol, Fatih
    Hung, Ting-Hsiang
    Reza, Shahed
    Chumbes, Eduardo M.
    Khurgin, Jacob
    Rajan, Siddharth
    [J]. APPLIED PHYSICS LETTERS, 2015, 107 (15)
  • [3] Monte Carlo calculation of velocity-field characteristics of wurtzite GaN
    Bhapkar, UV
    Shur, MS
    [J]. JOURNAL OF APPLIED PHYSICS, 1997, 82 (04) : 1649 - 1655
  • [4] High-field properties of carrier transport in bulk wurtzite GaN: A Monte Carlo perspective
    Chen, Shiyu
    Wang, Gang
    [J]. JOURNAL OF APPLIED PHYSICS, 2008, 103 (02)
  • [5] Modeling Bias Dependence of Self-Heating in GaN HEMTs Using Two Heat Sources
    Chen, Xuesong
    Boumaiza, Slim
    Wei, Lan
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2020, 67 (08) : 3082 - 3087
  • [6] Self-Heating and Equivalent Channel Temperature in Short Gate Length GaN HEMTs
    Chen, Xuesong
    Boumaiza, Slim
    Wei, Lan
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 66 (09) : 3748 - 3755
  • [7] The Impact of Bias Conditions on Self-Heating in AlGaN/GaN HEMTs
    Choi, Sukwon
    Heller, Eric R.
    Dorsey, Donald
    Vetury, Ramakrishna
    Graham, Samuel
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2013, 60 (01) : 159 - 162
  • [8] Influence of Different Gate Biases and Gate Lengths on Parasitic Source Access Resistance in AlGaN/GaN Heterostructure FETs
    Cui, Peng
    Liu, Huan
    Lin, Wei
    Lin, Zhaojun
    Cheng, Aijie
    Yang, Ming
    Liu, Yan
    Fu, Chen
    Lv, Yuanjie
    Luan, Chongbiao
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (03) : 1038 - 1044
  • [9] Electron Transport Properties of AlxGa1-xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations
    Fang, Jingtian
    Fischetti, Massimo, V
    Schrimpf, Ronald D.
    Reed, Robert A.
    Bellotti, Enrico
    Pantelides, Sokrates T.
    [J]. PHYSICAL REVIEW APPLIED, 2019, 11 (04):
  • [10] Effect of Optical Phonon Scattering on the Performance of GaN Transistors
    Fang, Tian
    Wang, Ronghua
    Xing, Huili
    Rajan, Siddharth
    Jena, Debdeep
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (05) : 709 - 711