2DEG density-velocity model;
AlGaN/GaN heterojunction FETs (HFETs);
electron transport;
Monte Carlo (MC);
MONTE-CARLO CALCULATION;
GAN;
VELOCITY;
TRANSCONDUCTANCE;
TEMPERATURE;
IMPACT;
D O I:
10.1109/TED.2023.3303407
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This study investigates bias-dependent elec-tron and thermal transport based on the electrothermal Monte Carlo (MC) simulation with velocity-field charac-teristics obtained by a self-consistent iterative method. A peak electron velocity of 1.43 x 10(5) m/s was obtained at a drain current of 534 A/m corresponding to a channel electron density of 2.7 x 10(12) cm(-2). This behavior was found to be in good agreement with previously extracted experiments. A new 2DEG density versus electron velocity model based on polar optical phonon (POP) scattering and polarization Coulomb field (PCF) scattering is proposed to explain bias-dependent electron transport. The good agreement between experimental results and simulated current-voltage characteristics proves the accuracy of our MC simulation.
机构:
Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
Chen, Shiyu
Wang, Gang
论文数: 0引用数: 0
h-index: 0
机构:
Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
机构:
Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Choi, Sukwon
Heller, Eric R.
论文数: 0引用数: 0
h-index: 0
机构:
USAF, Mat & Mfg Directorate, Res Lab, Wright Patterson AFB, OH 45433 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Heller, Eric R.
Dorsey, Donald
论文数: 0引用数: 0
h-index: 0
机构:
USAF, Mat & Mfg Directorate, Res Lab, Wright Patterson AFB, OH 45433 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Dorsey, Donald
Vetury, Ramakrishna
论文数: 0引用数: 0
h-index: 0
机构:
RF Micro Devices, Def & Power Business Unit, Charlotte, NC 28269 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Vetury, Ramakrishna
Graham, Samuel
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
机构:
Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
Chen, Shiyu
Wang, Gang
论文数: 0引用数: 0
h-index: 0
机构:
Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R ChinaSun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China
机构:
Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Choi, Sukwon
Heller, Eric R.
论文数: 0引用数: 0
h-index: 0
机构:
USAF, Mat & Mfg Directorate, Res Lab, Wright Patterson AFB, OH 45433 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Heller, Eric R.
Dorsey, Donald
论文数: 0引用数: 0
h-index: 0
机构:
USAF, Mat & Mfg Directorate, Res Lab, Wright Patterson AFB, OH 45433 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Dorsey, Donald
Vetury, Ramakrishna
论文数: 0引用数: 0
h-index: 0
机构:
RF Micro Devices, Def & Power Business Unit, Charlotte, NC 28269 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA
Vetury, Ramakrishna
Graham, Samuel
论文数: 0引用数: 0
h-index: 0
机构:
Georgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USAGeorgia Inst Technol, George W Woodruff Sch Mech Engn, Atlanta, GA 30332 USA