Highly enhanced thermal conductance across metal/graphene/SiO2 interface by ion bombardment

被引：3
作者：
Zhao, Yu [1 ]
Xu, Wei [1 ]
Huang, Shuyu [1 ]
Ma, Dexian [1 ]
Tao, Yi [1 ]
Wang, Qun [2 ]
Sha, Jingjie [1 ]
Yang, Juekuan [1 ]
机构：
[1] Southeast Univ, Sch Mech Engn, Jiangsu Key Lab Design & Manufacture Micronano Bio, Nanjing 211189, Peoples R China
[2] Special Equipment Safety Supervis Inspect Inst Jia, Nanjing 210036, Peoples R China
来源：
INTERNATIONAL COMMUNICATIONS IN HEAT AND MASS TRANSFER | 2023年 / 140卷
基金：
中国国家自然科学基金;
关键词：
Interfacial thermal conductance; Al; graphene; SiO2; interface; Ion bombardment; Adsorption interaction; Thermal management; HEAT-CONDUCTION; GRAPHENE; METAL; TRANSPORT; FUNCTIONALIZATION; STRENGTH; DEFECTS; ENERGY; FILMS; OXIDE;
D O I：
10.1016/j.icheatmasstransfer.2022.106560
中图分类号：
O414.1 [热力学];
学科分类号：
摘要：
Low thermal conductance (G) across metal/graphene interfaces presents an enormous challenge for the heat dissipation in graphene-based devices. In this paper, the heat conduction across Al/graphene/SiO2 interface at different doses of gallium (Ga) ion bombardment are explored. It is found that G of Al/graphene/SiO2 interface gradually rises with increasing dose until a peak value is obtained at a dose of 6.88 x 1012 ions/cm2. The maximum enhancement in G of Al/ion-bombarded graphene/SiO2 interface is measured to be almost 6 times as much as that of Al/pristine graphene/SiO2 interface. Such a large enhancement in G is ascribed to the recon-struction of C/O bonds on the ion-bombarded graphene surface, which intensifies the adsorption interaction between Al film and ion-bombarded graphene. This paper provides a facile approach for tailoring the thermal transport cross metal/graphene interfaces, which ultimately benefits the effective thermal management of graphene-based devices.
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页数：7
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