The Effects of Electrostatic Interactions on Abnormal Growth of Particles Deposited by Charged Nanoparticles During Chemical Vapor Deposition of Silicon

被引：1
|
作者：
Byun, Min Gyo [1 ]
Park, Jong Hwan [1 ]
Yang, Jeong Woo [1 ]
Hwang, Nong Moon [1 ]
Park, Jinwoo [2 ]
Yu, Byung Deok [2 ]
机构：
[1] Seoul Natl Univ, Dept Mat Sci & Engn, 1 Gwanak Ro, Seoul 08826, South Korea
[2] Univ Seoul, Dept Phys, 163 Seoulsiripdae Ro, Seoul 02504, South Korea
来源：
ELECTRONIC MATERIALS LETTERS | 2023年 / 19卷 / 02期
基金：
新加坡国家研究基金会;
关键词：
Non-classical crystallization; Abnormal growth; Charged nanoparticle; kMC simulation; Chemical vapor deposition; CLUSTERS; NUCLEATION; SI;
D O I：
10.1007/s13391-022-00390-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We used kinetic Monte Carlo (kMC) simulations to investigate the development over time of a non-classical crystallization system featuring many charged nanoparticles (CNPs) in the gas phase; we studied the abnormal growth of deposited silicon (Si) particles during chemical Si vapor deposition. We identified three parameters associated with abnormal growth of deposited CNPs. The kMC results revealed that abnormal, deposited CNP growth was accentuated when the CNP charge in the gas phase was balanced. In addition, a high CNP density (an elevated particle volume fraction) in the gas phase favored abnormal growth of deposited CNPs, as did a faster gas flow velocity, even when the charge signs of CNPs in the gas phase were not balanced.
引用
收藏
页码：218 / 228
页数：11
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