The Effects of Electrostatic Interactions on Abnormal Growth of Particles Deposited by Charged Nanoparticles During Chemical Vapor Deposition of Silicon

We used kinetic Monte Carlo (kMC) simulations to investigate the development over time of a non-classical crystallization system featuring many charged nanoparticles (CNPs) in the gas phase; we studied the abnormal growth of deposited silicon (Si) particles during chemical Si vapor deposition. We identified three parameters associated with abnormal growth of deposited CNPs. The kMC results revealed that abnormal, deposited CNP growth was accentuated when the CNP charge in the gas phase was balanced. In addition, a high CNP density (an elevated particle volume fraction) in the gas phase favored abnormal growth of deposited CNPs, as did a faster gas flow velocity, even when the charge signs of CNPs in the gas phase were not balanced.