Aging improvement of Mn-Zn-Ni-Mg-Al-O high-entropy oxide films

被引:3
|
作者
Ren, Wei [1 ,2 ]
Han, Yu-Xin [1 ]
Wang, Wei-Li [2 ]
Li, Sai-Rui [1 ]
Liu, Xian-Hai [1 ]
Weng, Xiang [2 ]
机构
[1] Xian Univ Posts & Telecommun, Sch Sci, Xian 710121, Peoples R China
[2] Northwestern Polytech Univ, Xian 710072, Peoples R China
基金
中国国家自然科学基金;
关键词
ELECTRICAL-PROPERTIES; THIN-FILMS; CATIONIC DISTRIBUTION; TEMPERATURE;
D O I
10.1007/s10854-023-11853-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Mn(1.9-x) Zn0.2Ni0.6MgxAl0.3O4 (0 < x < 1) high-entropy oxide films were prepared on silicon substrate. The effects of Mg doping on microstructure, cation distribution, and electrical and aging properties of thin films were investigated. Mg2+ mainly replaces Mn2+ in the tetrahedron and does not affect the distribution of other trivalent cations in the octahedron. The thermal constant of the film varies from 2989.5 to 2176.6 K with the change of Mg/Mn ion content. Aging coefficient varies from 10.47 to 9.07%. The aging improvement of the films is ascribed to the multiple mechanisms of cationic sluggish diffusion as well as the variance in film grain size.
引用
收藏
页数:9
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