Influence of V/III flux ratio on type-II InAs/GaSb superlattice for very-long wavelength

被引：3

作者：

Yang, Yichen ^{[1
]}

Zheng, Xiantong ^{[1
,2
]}

Liu, Zhaojun ^{[1
]}

Liu, Bingfeng ^{[1
]}

Yu, Jing ^{[1
]}

Zhang, Dongliang ^{[1
,2
]}

Liu, Yuan ^{[1
,2
]}

Lu, Lidan ^{[1
,2
]}

Feng, Yulin ^{[1
,2
]}

Chen, Guang ^{[1
,2
]}

Luo, Fei ^{[1
,2
]}

Dong, Mingli ^{[1
,2
]}

Zhu, Lianqing ^{[1
,2
]}

机构：

[1] Beijing Informat Sci & Technol Univ, Sch Instrument Sci & Optoelect Engn, Beijing 100096, Peoples R China

[2] Guangzhou Nansha ZiXi Intelligent Sensing Res Inst, Bldg 9, 8 Nanjiang Er Rd, Pearl River St, Guangzhou 511462, Peoples R China

来源：

MICRO AND NANOSTRUCTURES | 2023年 / 178卷

关键词：

InAs; GaSb; Type -II superlattice; Very -long wavelength; Infrared detection; V; III flux Ratio; DETECTORS;

D O I：

10.1016/j.micrna.2023.207578

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A study was conducted to develop InAs/GaSb type-II superlattices (T2SLs) for very long wavelength infrared detection. The results showed that the V/III flux ratio not only affected the magnitude of the strain but also greatly influenced the surface roughness. By further optimizing the V/III ratio, a sample with a surface roughness of 0.1 nm was obtained within the 5 x 5 & mu;m2 range, and the full width at half maximum (FWHM) of the 0th order peak was only 22.1 arcsec. Through high-resolution transmission electron microscopy (HRTEM) characterization, InAs and GaSb could be effectively distinguished, and strain maps revealed that both interfaces were under large tensile strain. Furthermore, energy dispersive spectroscopy (EDS) testing revealed some degree of intermixing between different layers. Finally, a photoluminescence (PL) spectrum was used to measure the band gap and quality of the superlattice. The PL peak was determined to be 13.65 & mu;m with an FWHM of 27 meV, laying the foundation for the subsequent preparation of a very long wavelength array detector.

引用

页数：9

共 26 条

[11] Barrier infrared detectors [J].

Martyniuk, P. ;

Kopytko, M. ;

Rogalski, A. .

OPTO-ELECTRONICS REVIEW, 2014, 22 (02) :127-146

[12] Infrared image sensor developments supported by the European Space Agency [J].

Minoglou, K. ;

Nelms, N. ;

Ciapponi, A. ;

Weber, H. ;

Wittig, S. ;

Leone, B. ;

Crouzet, P. E. .

INFRARED PHYSICS & TECHNOLOGY, 2019, 96 :351-360

[13] Very long wavelength infrared type-II detectors operating at 80 K [J].

Mohseni, H ;

Tahraoui, A ;

Wojkowski, J ;

Razeghi, M ;

Brown, GJ ;

Mitchel, WC ;

Park, YS .

APPLIED PHYSICS LETTERS, 2000, 77 (11) :1572-1574

[14] Dark current suppression in type IIInAs/GaSb superlattice long wavelength infrared photodiodes with M-structure barrier [J].

Nguyen, Binh-Minh ;

Hoffman, Darin ;

Delaunay, Pierre-Yves ;

Razeghi, Manijeh .

APPLIED PHYSICS LETTERS, 2007, 91 (16)

[15] A review of the latest developments of MCT infrared technology from visible to VLWIR for space applications at SOFRADIR [J].

Pidancier, Patricia ;

Jamin, Nicolas ;

Fieque, Bruno ;

Leroy, Cedric ;

Chorier, Philippe .

INFRARED TECHNOLOGY AND APPLICATIONS XXXIX, 2013, 8704

[16] nBn structure based on InAs/GaSb type-II strained layer superlattices [J].

Rodriguez, J. B. ;

Plis, E. ;

Bishop, G. ;

Sharma, Y. D. ;

Kim, H. ;

Dawson, L. R. ;

Krishna, S. .

APPLIED PHYSICS LETTERS, 2007, 91 (04)

[17] Type-II superlattice photodetectors versus HgCdTe photodiodes [J].

Rogalski, A. ;

Martyniuk, P. ;

Kopytko, M. .

PROGRESS IN QUANTUM ELECTRONICS, 2019, 68

[18] InAs/GaSb type-II superlattice infrared detectors: Future prospect [J].

Rogalski, A. ;

Martyniuk, P. ;

Kopytko, M. .

APPLIED PHYSICS REVIEWS, 2017, 4 (03)

[19] NEW SEMICONDUCTOR SUPERLATTICE [J].

SAIHALASZ, GA ;

TSU, R ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 30 (12) :651-653

[20] PROPOSAL FOR STRAINED TYPE-II SUPERLATTICE INFRARED DETECTORS [J].

SMITH, DL ;

MAILHIOT, C .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (06) :2545-2548

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