LaGe2 Thin Films Designed as Band Filters for 6G Communication Technology

被引:4
作者
Alfhaid, Latifah Hamad Khalid [1 ]
Qasrawi, A. F. [2 ,3 ]
机构
[1] Univ Hail, Coll Sci, Dept Phys, Hail, Saudi Arabia
[2] Arab Amer Univ, Dept Phys, Jenin, Palestine
[3] Istinye Univ, Dept Elect & Elect Engn, TR-34010 Istanbul, Turkiye
关键词
LaGe2 thin films; thermal evaporation technique; 6G technology; LAALGE;
D O I
10.1007/s11664-023-10554-z
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Herein, LaGe2 thin films with thickness of 150 nm are grown on thin layers of indium by the thermal evaporation technique under a vacuum pressure of 10(-5) mbar. The films are structurally, morphologically, compositionally and electrically characterized. It is observed that thin films of LaGe2 are polycrystalline in nature, comprising slightly excess germanium in their structure. To establish their applicability in communication technology, two In/LaGe2/Ag and In/LaGe2/C electrical channels are formed. Both of the channels performed as negative resistance and capacitance sources. The channels exhibited microwave cutoff frequency exceeding 200 GHz. The resonance in the In/LaGe2/Ag and In/LaGe2/C channels dominates at driving frequencies of 1.21 GHz and 1.42 GHz, respectively. The measured impedance, magnitude of reflection coefficient ( S-11 parameter), return loss and voltage standing wave ratio spectra confirmed the suitability of the LaGe2 thin films for wireless 6G communication technology.
引用
收藏
页码:6216 / 6224
页数:9
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