Ga2O3@Al2O3 Core-Shell Nanowires for High-Performance Solar-Blind Photodetectors

被引：10

作者：

Jiang, Tiancai ^{[1
]}

Qiu, Ying ^{[1
]}

Tao, Jin ^{[1
,3
]}

Xiao, Xi ^{[1
,2
,3
]}

机构：

[1] Networks, China Informat Commun Technol Grp Corp CICT, State Key Lab Opt Commun Technol, Wuhan 430074, Peoples R China

[2] Natl Informat Optoelect Innovat Ctr, Wuhan 430074, Peoples R China

[3] Peng Cheng Lab PCL, Shenzhen 518055, Peoples R China

来源：

ACS APPLIED NANO MATERIALS | 2023年 / 6卷 / 11期

基金：

中国国家自然科学基金;

关键词：

solar-blind; photodetector; Ga2O3@Al2O3; core-shell; nanowires; BETA-GA2O3; THIN-FILMS;

D O I：

10.1021/acsanm.3c01695

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High-performancesolar-blind photodetectors (SBPDs) have been indispensablein both military and civilian applications. Herein, Ga2O3@Al2O3 core-shell nanowires(NWs) are synthesized by plasma-enhanced atomic layer deposition (PEALD)Al2O3 layer on the surface of Ga2O3 nanowires. The Ga2O3@Al2O3 NW has a length of tens of micrometers, and the thicknessof Ga2O3 and Al2O3 layersin the NW is approximately 30 and 5 nm, respectively. The PEALD methodpassivates surface defects to improve the crystal quality of Ga2O3. The metal-semiconductor-metal(MSM) Ga2O3@Al2O3 NW-basedSBPDs exhibit a superhigh sensitivity of 1.07 x 10(3) A/W and a high response speed of less than 83 ms at 5 V bias voltageunder 254 nm irradiation. Additionally, the Ga2O3@Al2O3 NW PDs exhibit a superhigh specificdetectivity of 3.38 x 10(11) Jones, an external quantumefficiency (EQE) of 5.22 x 10(5)%, and a high deep ultraviolet(DUV)/visible responsivity rejection ratio (R (254/405)) of 4.81 x 10(2). These results suggestthat this method is an effective way to design and prepare high-performancephotonic devices.

引用

收藏

页码：9849 / 9856

页数：8

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