Reduction of Schottky Barrier Height for Au-WS2 Interface with Iodine Doping - A Physical Insight

被引:1
作者
Carmel, Santhia A. [1 ]
Devi, D. Sharda [1 ]
Mohapatra, Nihar R. [1 ]
机构
[1] Indian Inst Technol, Dept Elect Engn, Gandhinagar, Gujarat, India
来源
2023 IEEE 23RD INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY, NANO | 2023年
关键词
CONTACTS; RESISTANCE;
D O I
10.1109/NANO58406.2023.10231183
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this work, using Density functional theory (DFT) simulations, we have shown the reduction of Schottky Barrier Height (SBH) for Au-WS2 interface with Iodine doping. The detailed physics behind this observation is also discussed. The Iodine (I) dopant is found to be an ideal donor than Chlorine (Cl) and Bromine (Br) because of its less electronegativity and larger atomic size. This fact is verified and supported by Mulliken analysis. Also, the I-doped structure is more stable, which can be observed from the interfacial distance and work of separation calculation. We have also validated this molecular doping at the contact part of the electrode region in a two-terminal device using Non-Equilibrium Greens Function (NEGF) formalism. In this work, all monolayer, interface, and device analyses show that Iodine is a better n-type dopant compared to Cl.
引用
收藏
页码:855 / 860
页数:6
相关论文
empty
未找到相关数据