Microstructure and oxidation behavior of SiOC coatings on C/C composites co-deposited with HMDS and TEOS by using CVD process

被引：7

作者：

Yan, Junjie ^{[1
]}

Wei, Xiumei ^{[1
]}

Liu, Qidong ^{[1
]}

Li, Yunping ^{[2
]}

Yu, Shu ^{[1
]}

机构：

[1] Cent South Univ, Natl Key Lab Sci & Technol High Strength Struct M, Changsha 410083, Peoples R China

[2] Cent South Univ, State Key Lab Powder Met, Changsha 410083, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2024年 / 50卷 / 05期

关键词：

C/C composites; Silicon oxycarbide; CVD; Oxidation; CHEMICAL-VAPOR-DEPOSITION; CARBON/CARBON COMPOSITES; ANTIOXIDATION; SURFACE; PROTECTION; RESISTANCE; NANOWIRES; FILMS;

D O I：

10.1016/j.ceramint.2023.12.117

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Silicon oxycarbide (SiOC) coatings were prepared through isothermal chemical vapor co-deposition by using two precursors of hexamethyldisilane (HMDS) and tetraethyl orthosilicate (TEOS). The microstructure, composition and the protectiveness on C/C composite against oxidation of the coatings prepared at temperatures ranging from 1423 K to 1563 K and pressures ranging from 500 Pa to 1200 Pa were investigated, respectively. After oxidation, cracks and defects were formed in the coatings of all conditions due to the volume shrinkage of amorphous SiO2 crystallization and the mismatch of thermal expansion coefficient (CTE) between SiOC coatings and substrate. The most oxidation-resistant SiOC coating was obtained at 1563 K and 500 Pa, which exhibited the lowest weight loss rate of 4.87 % after 12 h of oxidation at 1673 K in air condition.

引用

页码：7888 / 7896

页数：9

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