Exploring photogenerated charge carrier transfer in semiconductor/metal junctions using Kelvin probe force microscopy

被引:29
作者
Bie, Chuanbiao [1 ]
Meng, Zheng [1 ]
He, Bowen [2 ]
Cheng, Bei [2 ]
Liu, Gang [3 ]
Zhu, Bicheng [1 ]
机构
[1] China Univ Geosci, Fac Mat Sci & Chem, Lab Solar Fuel, Wuhan 430078, Peoples R China
[2] Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
[3] Natl Ctr Nanosci & Technol, CAS Key Lab Standardizat & Measurement Nanotechnol, Beijing 100190, Peoples R China
来源
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2024年 / 173卷
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
Kelvin probelforce microscopy; Surface potential; Work function; Charge carrier transfer; Contact potential difference; SCHEME HETEROJUNCTION PHOTOCATALYSTS; WORK FUNCTION MEASUREMENTS; SURFACES;
D O I
10.1016/j.jmst.2023.07.019
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Semiconductor/metal junctions are widely discussed in photocatalysis. However, there is a notable scarcity of systematic studies focusing on photogenerated charge carrier transfer in such junctions. Herein, CdS/Pt, CdS/Au, and CdS/Ag are synthesized to serve as model systems for investigating the charge carrier transfer in semiconductor/metal junctions. Kelvin probe force microscopy is employed to visualize the transfer of photogenerated carriers in these materials. The results show that the electron transfer behavior under illumination is related to the conduction band position of CdS and the Fermi level position of the metal. Moreover, Schottky junctions hinder the transfer of photogenerated electrons from CdS to Pt and Au, whereas ohmic contacts facilitate the transfer of photogenerated electrons from CdS to Ag. This work provides novel insights into the mechanisms governing the transfer of photogenerated carriers in semiconductor/metal junctions.@2023 Published by Elsevier Ltd on behalf of The editorial office of Journal of Materials Science & Technology.
引用
收藏
页码:11 / 19
页数:9
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