Theoretical investigation of spin Hall conductivity in graphene/MoS2 van der Waals heterostructure under external electric field

被引：2

作者：

Hastuti, Dian Putri ^{[1
]}

Nawa, Kenji ^{[1
,2
]}

Rhim, S. H. ^{[3
]}

Nakamura, Kohji ^{[1
]}

机构：

[1] Mie Univ, Grad Sch Engn, 1577 Kurimamachiya Cho, Tsu, Mie 5148507, Japan

[2] Natl Inst Mat Sci, Res Ctr Magnet & Spintron Mat, 1-2-1 Sengen, Tsukuba, Ibaraki 3050047, Japan

[3] Univ Ulsan, Dept Phys, Ulsan 680749, South Korea

来源：

CURRENT APPLIED PHYSICS | 2024年 / 59卷

基金：

新加坡国家研究基金会;

关键词：

Graphene; van der Waals heterostructure; Spin Hall conductivity; MONOLAYER; INTERFACE; TRANSPORT; BANDGAP; MOS2;

D O I：

10.1016/j.cap.2023.12.012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Generation and controlling of spin current in two-dimensional (2D) materials such as graphene are challenging due to small intrinsic spin-orbit coupling (SOC) of the 2D materials. We demonstrate from first-principles calculations that the finite spin Hall conductivity (SHC) of 25 omega-1cm-1 is obtained in van der Waals heterostructure of graphene/MoS2, and the SHC is maximized up to 170 omega-1cm-1 by applying positive electric field, while application of negative electric field hardly affects the SHC. The underlying mechanism of large SHC is discussed in terms of spin Berry curvature in Dirac-cone bands of graphene in the heterostructure, where a size of band gap is modulated sensitively by a magnitude of the external electric field.

引用

页码：71 / 76

页数：6

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