On the Optical Properties and Structure of In2O3 Films Deposited onto Al2O3 (012) Substrates by dc-Magnetron Sputtering

被引:1
作者
Tikhii, A. A. [1 ]
Nikolaenko, Yu. M. [2 ]
Svyrydova, K. A. [2 ,3 ]
Zhikharev, I. V. [2 ]
机构
[1] Lugansk State Pedag Univ, Lugansk 91011, Russia
[2] Galkin Donetsk Inst Phys & Engn, Doneck 83114, Russia
[3] Donbas Natl Acad Civil Engn & Architecture, Makeyevka 286123, Russia
来源
JOURNAL OF SURFACE INVESTIGATION | 2023年 / 17卷 / 03期
关键词
indium oxide; films; sapphire; ellipsometry; optical transmission; X-ray diffraction analysis; magnetron deposition; annealing; substrate temperature; deposition time; band gap; optical properties; OXIDE THIN-FILMS; INDIUM; GROWTH; GAS;
D O I
10.1134/S1027451023030151
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The results of studying the optical properties and structure of In2O3 films on Al2O3 (012) substrates deposited by dc-magnetron sputtering are summarized. The films investigated differ in terms of the deposition time, substrate temperature, and the presence of additional heat treatment in air. According to X-ray diffraction measurements, these films show a reflection, which correspond to the (222) plane of the cubic modification of In2O3. Its exact position and half-width depend on the deposition time. The optical properties of the resulting films are explained by the microstructure, which is inhomogeneous in thickness and formed during the sputtering of a target with a relatively low mechanical strength. Thus, the refractive index of the films deposited onto substrates at room temperature increases in the direction from the substrate to the external interface. At a substrate temperature of more than 300 degrees C, the refractive index of the films is uniform, except for a rough layer on the surface. Heat treatment reduces the number of defects in the crystal structure of the films and leads to densification of the film material. As a result, inhomogeneity of the refractive index disappears and the observed band gap for direct transitions decreases. The latter results from a change in the Burstein-Moss shift as a consequence of a decrease in the lattice-defect concentration. The band gap for indirect transitions (corresponding to the true value of the band gap) is insensitive to annealing.
引用
收藏
页码:562 / 567
页数:6
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