Creating the Future with Silicon

被引:1
作者
Jung, E. S. [1 ]
机构
[1] Samsung Elect, CTO, Hwaseong 18448, Gyeonggi, South Korea
关键词
DRAM; future technology; logic; NAND Flash Semiconductor Materials; ATOMIC LAYER DEPOSITION; TECHNOLOGY; PRECURSORS; CAPACITOR; ALD;
D O I
10.1002/admt.202200867
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The rise of AI technology, the expansion of smart and connected devices, and the COVID-19 global pandemic have driven a change in the nature of social interactions from face-to-face to contact-free/remote, which has tremendously increased the demand for various semiconductor devices. However, scaling and performance improvement of semiconductor devices are becoming more difficult every year, and extensive studies have been conducted to overcome these technological roadblocks. This paper reviews the present state of semiconductor development and discusses several approaches to overcome these scaling and performance limitations. Additionally, the importance of collaboration and the related ecosystem is emphasized to strengthen the cooperation among semiconductor stakeholders and support further semiconductor development.
引用
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页数:9
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