Influence of Zr50Cu50 thin film metallic glass as buffer layer on the structural and optoelectrical properties of AZO films

被引：0

作者：

张宝庆 ^{[1
]}

刘高鹏 ^{[1
]}

宗海涛 ^{[2
]}

付丽歌 ^{[2
]}

魏志飞 ^{[1
]}

杨晓炜 ^{[1
]}

曹国华 ^{[2
]}

机构：

[1] School of Materials Science and Engineering, Henan Polytechnic University

[2] School of Physics and Electronic Information Engineering, Henan Polytechnic University

来源：

Chinese Physics B | 2020年 / 03期

基金：

中国国家自然科学基金;

关键词：

aluminum-doped ZnO(AZO); Zr50Cu50; thin film metallic glass; optoelectrical properties; morphology;

D O I：

暂无

中图分类号：

TB383.2 []; O469 [凝聚态物理学];

学科分类号：

070205 ; 080501 ; 1406 ;

摘要：

Aluminum-doped ZnO(AZO) thin films with thin film metallic glass of Zr50Cu50as buffer are prepared on glass substrates by the pulsed laser deposition. The influence of buffer thickness and substrate temperature on structural, optical, and electrical properties of AZO thin film are investigated. Increasing the thickness of buffer layer and substrate temperature can both promote the transformation of AZO from amorphous to crystalline structure, while they show(100)and(002) unique preferential orientations, respectively. After inserting Zr50Cu50layer between the glass substrate and AZO film, the sheet resistance and visible transmittance decrease, but the infrared transmittance increases. With substrate temperature increasing from 25℃ to 520℃, the sheet resistance of AZO(100 nm)/Zr50Cu50(4 nm) film first increases and then decreases, and the infrared transmittance is improved. The AZO(100 nm)/Zr50Cu50(4 nm) film deposited at a substrate temperature of 360℃ exhibits a low sheet resistance of 26.7 ?/, high transmittance of 82.1% in the visible light region, 81.6% in near-infrared region, and low surface roughness of 0.85 nm, which are useful properties for their potential applications in tandem solar cell and infrared technology.

引用

页码：423 / 430

页数：8