应用于太阳能电池的硼掺杂纳米硅薄膜性能研究(英文)

被引：1

作者：

宋超 ^{[1
,2
]}

王祥 ^{[1
]}

宋捷 ^{[1
]}

林圳旭 ^{[1
]}

张毅 ^{[1
]}

郭艳青 ^{[1
]}

黄锐 ^{[1
]}

机构：

[1] Department of Physics and Electrical Engineering, Hanshan Normal University

[2] School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University

来源：

Science China Materials | 2015年 / 58卷 / 09期

关键词：

纳米硅薄膜; Si; 硼掺杂;

D O I：

暂无

中图分类号：

TQ127.2 [硅及其无机化合物]; TM914.4 [太阳能电池];

学科分类号：

0817 ; 080502 ;

摘要：

本文采用等离子体增强化学气相沉积技术(PECVD)制备了轻度掺杂的氢化非晶硅薄膜,沉积过程中以Si H4,B2H6和H2的混和气作为反应源.原始淀积材料经过800和1000°C的高温热退火处理后,形成了硼掺杂的纳米硅薄膜.X射线光电子能谱(XPS)显示硼原子在薄膜中形成了替位式掺杂.根据不同温度下暗电导率的测量结果,轻度硼掺杂的纳米硅薄膜具有较高的室温暗电导率和较低的激活能.进而,采用该种P型硅薄膜材料以N型单晶硅为基底,制作了P-N结太阳能电池器件.根据电流-电压特性以及光谱相应曲线的测量分析,对电池的性能特性进行了研究.

引用

页码：704 / 708

页数：5

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