Photoemission of graded-doping GaN photocathode

被引：0
|
作者：
付小倩 [1 ,2 ]
常本康 [1 ]
王晓晖 [1 ]
李飙 [1 ]
杜玉杰 [1 ]
张俊举 [1 ]
机构：
[1] Institute of Electronic Engineering and Optoelectronic Technology,Nanjing University of Science and Technology
[2] School of Information Science and Engineering,University of Jinan
来源：
Chinese Physics B | 2011年 / 20卷 / 03期
基金：
中国国家自然科学基金;
关键词：
GaN photocathode; graded-doping; photoemission; quantum efficiency;
D O I：
暂无
中图分类号：
O472.8 [];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ;
摘要：
We study the photoemission process of graded-doping GaN photocathode and find that the built-in electric fields can increase the escape probability and the effective diffusion length of photo-generated electrons,which results in the enhancement of quantum efficiency.The intervalley scattering mechanism and the lattice scattering mechanism in high electric fields are also investigated.To prevent negative differential mobility from appearing,the surface doping concentration needs to be optimized,and it is calculated to be 3.19×10 17 cm 3.The graded-doping GaN photocathode with higher performance can be realized by further optimizing the doping profile.
引用
收藏
页码：485 / 489
页数：5
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