Characterization of (100)-orientated diamond film grown by HFCVD method with a positive DC bias voltage

被引：4

作者：

马莹 ^{[1
]}

王林军 ^{[1
]}

刘建敏 ^{[1
]}

苏青峰 ^{[1
]}

徐闰 ^{[1
]}

彭鸿雁 ^{[2
]}

史伟民 ^{[1
]}

夏义本 ^{[1
]}

机构：

[1] School of Materials Science and Engineering,Shanghai University,Shanghai 200072,China

[2] Physics Department,Mudanjiang Normal College,Mudanjiang 157012,China

来源：

Transactions of Nonferrous Metals Society of China | 2006年 / S1期

基金：

中国国家自然科学基金;

关键词：

(100)-orientation; diamond film; HFCVD; positive bias;

D O I：

暂无

中图分类号：

TB383.2 [];

学科分类号：

070205 ; 080501 ; 1406 ;

摘要：

The (100)-orientated diamond film was deposited by hot-filament chemical vapor deposition (HFCVD) technology with a positive DC bias voltage. The morphology, X-ray diffraction (XRD), RAMAN spectrum and dark current versus applied voltage characteristics analysis show that the positive dc bias can increase the nucleation density and (100)-orientated growth, making the growth of the high quality diamond film easier and cheaper than using other methods.

引用

页码：313 / 316

页数：4