Improvement of photoemission performance of a gradient-doping transmission-mode GaAs photocathode

被引：0

作者：

张益军 ^{[1
]}

牛军 ^{[1
]}

赵静 ^{[1
]}

熊雅娟 ^{[1
]}

任玲 ^{[1
]}

常本康 ^{[1
]}

钱芸生 ^{[1
]}

机构：

[1] Institute of Electronic Engineering and Optoelectronic Technology,Nanjing University of Science and Technology

来源：

Chinese Physics B | 2011年 / 20卷 / 11期

基金：

中国国家自然科学基金;

关键词：

transmission-mode photocathode; gradient-doping; Cs-O activation; quantum yield;

D O I：

暂无

中图分类号：

O472.3 [];

学科分类号：

070205 ; 080501 ; 0809 ; 080903 ;

摘要：

Two types of transmission-mode GaAs photocathodes grown by molecular beam epitaxy are compared in terms of activation process and spectral response,one has a gradient-doping structure and the other has a uniform-doping structure.The experimental results show that the gradient-doping photocathode can obtain a higher photoemission capability than the uniform-doping one.As a result of the downward graded band-bending structure,the cathode performance parameters,such as the electron average diffusion length and the surface electron escape probability obtained by fitting quantum yield curves,are greater for the gradient-doping photocathode.The electron diffusion length is within a range of from 2.0 to 5.4μm for doping concentration varying from 10to 10cmand the electron average diffusion length of the gradient-doping photocathode achieves 3.2μm.

引用

页码：534 / 540

页数：7