Enhanced adhesion of Cu-W thin films by ion beam assisting bombardment implanting

被引:0
作者
周灵平 [1 ]
汪明朴 [1 ]
王瑞 [2 ]
李周 [1 ]
朱家俊 [2 ]
彭坤 [2 ]
李德意 [2 ]
李绍禄 [2 ]
机构
[1] School of Materials Science and Engineering,Central South University
[2] College of Materials Science and Engineering,Hunan University
关键词
Cu-W thin film; adhesive strength; ion beam; magnetron sputtering; interface;
D O I
暂无
中图分类号
TB383.2 [];
学科分类号
070205 ; 080501 ; 1406 ;
摘要
Cu-W thin film with high W content was deposited by dual-target DC-magnetron co-sputtering technology.Effects of the substrates surface treating technique on the adhesive strength of Cu-W thin films were studied.It is found that the technique of ion beam assisting bombardment implanting of W particles can remarkably improve the adhesive property of Cu-W thin films. Indentation and scratching test show that,the critical load is doubled over than the sample only sputter-cleaned by ion beam.The enhancing mechanism of ion beam assisting bombardment implanting of Cu-W thin films was analyzed.With the help of mid-energy Ar+ion beam,W atoms can diffuse into the Fe-substrate surface layer;Fe atoms in the substrate surface layer and W atoms interlace with one another;and microcosmic mechanical meshing and diffusing combination on atom-scale among the Fe and W atoms through the film/substrate interface can be formed.The wettability and thermal expansion properties of the W atoms diffusion zone containing plentiful W atoms are close to those of pure W or W-based Cu-W film.
引用
收藏
页码:372 / 377
页数:6
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