Effects of different dopants on switching behavior of HfO2-based resistive random access memory

被引：0
作者：
邓宁 [1 ,2 ]
庞华 [1 ,2 ]
吴畏 [1 ,2 ]
机构：
[1] Institute of Microelectronics, Tsinghua University
[2] Innovation Center for MicroNanoelectronics and Integrated System
来源：
Chinese Physics B | 2014年 / 23卷 / 10期
基金：
国家高技术研究发展计划(863计划);
关键词：
RRAM; conductive filament; doping;
D O I：
暂无
中图分类号：
TP333 [存贮器];
学科分类号：
081201 ;
摘要：
In this study the effects of doping atoms(Al, Cu, and N) with different electro-negativities and ionic radii on resistive switching of HfO2-based resistive random access memory(RRAM) are systematically investigated. The results show that forming voltages and set voltages of Al/Cu-doped devices are reduced. Among all devices, Cu-doped device shows the narrowest device-to-device distributions of set voltage and low resistance. The effects of different dopants on switching behavior are explained with deferent types of CFs formed in HfO2 depending on dopants: oxygen vacancy(Vo) filaments for Al-doped HfO2 devices, hybrid filaments composed of oxygen vacancies and Cu atoms for Cu-doped HfO2 devices,and nitrogen/oxygen vacancy filaments for N-doped HfO2 devices. The results suggest that a metal dopant with a larger electro-negativity than host metal atom offers the best comprehensive performance.
引用
收藏
页码：493 / 496
页数：4
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