A novel 4H-SiC lateral bipolar junction transistor structure with high voltage and high current gain

被引：0

作者：

邓永辉 ^{[1
]}

谢刚 ^{[1
]}

汪涛 ^{[1
]}

盛况 ^{[1
]}

机构：

[1] College of Electrical Engineering,Zhejiang University

来源：

ChinesePhysicsB | 2013年 / 22卷 / 09期

关键词：

4H-SiC; lateral bipolar junction transistor (BJT); high current gain; high breakdown voltage;

D O I：

暂无

中图分类号：

TN322.8 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

In this paper, a novel structure of a 4H-SiC lateral bipolar junction transistor (LBJT) with a base field plate and double RESURF in the drift region is presented. Collector-base junction depletion extension in the base region is restricted by the base field plate. Thin base as well as low base doping of the LBJT therefore can be achieved under the condition of avalanche breakdown. Simulation results show that thin base of 0.32 μm and base doping of 3×1017 cm-3 are obtained, and corresponding current gain is as high as 247 with avalanche breakdown voltage of 3309 V when the drift region length is 30 μm. Besides, an investigation of a 4H-SiC vertical BJT (VBJT) with comparable breakdown voltage (3357 V) shows that the minimum base width of 0.25 μm and base doping as high as 8×1017 cm-3 contribute to a maximum current gain of only 128.

引用

页码：563 / 567

页数：5

共 3 条

[1] Large Area 1200 V SiC BJTs with β>100 and ρON<3 mΩcm2[J] . Domeij Martin,Konstantinov Andrei,Lindgren Anders,Zaring Carina,Gumaelius Krister,Reimark Mats. Materials Science Forum . 2012 (717)
[2] A New High Current Gain 4H-SiC Bipolar Junction Transistor with Suppressed Surface Recombination Structure: SSR-BJT[J] . Nonaka Kenichi,Horiuchi Akihiko,Negoro Yuki,Iwanaga Kensuke,Yokoyama Seiichi,Hashimoto Hideki,Sato Masashi,Maeyama Yusuke,Shimizu Masaaki,Iwakuro Hiroaki. Materials Science Forum . 2009 (615)
[3] 4H–SiC BJTs with current gain of 110[J] . Qingchun (Jon) Zhang,Anant Agarwal,Al Burk,Bruce Geil,Charles Scozzie. Solid State Electronics . 2008 (7)

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