A novel resonant cavity enhanced photodetector with flattop and steep-edge response

被引：0
|
作者：
邸菁 [1 ]
黄永清 [1 ]
段晓峰 [1 ]
宋海兰 [1 ]
任晓敏 [1 ]
黄辉 [1 ]
王琦 [1 ]
机构：
[1] Key Laboratory of Information Photonics and Optical Communications,Ministry of Education,Beijing University of Posts and Telecommunications
来源：
Optoelectronics Letters | 2010年 / 6卷 / 04期
基金：
国家高技术研究发展计划(863计划);
关键词：
GaAs; A novel resonant cavity enhanced photodetector with flattop and steep-edge response;
D O I：
暂无
中图分类号：
TN36 [半导体光电器件];
学科分类号：
0803 ;
摘要：
A novel resonant cavity enhanced(RCE) photodetector with flat-top and steep-edge response is presented.The response is obtained by designing a gradient-thickness P area in the absorption cavity.Simulation results show that the maximum and minimum values of the quantum efficiency in bandpass are 85.242% and 87.564% respectively,the ripple is about 3.6%,and 0.5 dB,3 dB and 20 dB bandwidths are 0.3 nm,0.4 nm and 1.2 nm,respectively.The mesa area is 10 μm×10 μm and the frequency response bandwidth is 87 GHz.Compared with similar photodetectors,this photodetector has high quantum efficiency,narrow spectral response linewidth,good flat-top and steep-edge response and ideal high-speed characteristics.
引用
收藏
页码：265 / 268
页数：4
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