1.0μm gate-length InP-based InGaAs high electron mobility transistors by mental organic chemical vapor deposition

被引：0

作者：

高成 ^{[1
]}

李海鸥 ^{[2
]}

黄姣英 ^{[1
]}

刁胜龙 ^{[1
]}

机构：

[1] School of Reliability and System Engineering,Beihang University

[2] Information & Communication College,Guilin University of Electronic Technology

来源：

Journal of Central South University | 2012年 / 19卷 / 12期

基金：

中国国家自然科学基金;

关键词：

metamorphic device; mental organic chemical vapor deposition; high electron mobility transistors; InP substrate; InGaAs;

D O I：

暂无

中图分类号：

TN32 [半导体三极管（晶体管）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

InGaAs high electron mobility transistors(HEMTs)on InP substrate with very good device performance have been grown by mental organic chemical vapor deposition(MOCVD).Room temperature Hall mobilities of the 2-DEG are measured to be over 8700cm2/V-s with sheet carrier densities larger than 4.6×10 12cm-2.Transistors with 1.0μm gate length exhibits transconductance up to 842mS/mm.Excellent depletion-mode operation,with a threshold voltage of-0.3V and IDSS of 673mA/mm,is realized.The non-alloyed ohmic contact special resistance is as low as 1.66×10-8Ω/cm2,which is so far the lowest ohmic contact special resistance.The unity current gain cut off frequency(fT)and the maximum oscillation frequency(fmax)are 42.7 and 61.3 GHz,respectively.These results are very encouraging toward manufacturing InP-based HEMT by MOCVD.

引用

页码：3444 / 3448

页数：5