Carbon Nitride Thin Films Deposited by Plasma Assisted Nd∶YAG Laser Ablation of Graphite in N2+H2 Atmosphere

Carbon nitride thin films are deposited on silicon wafers by 532 nm Nd∶YAG laser ablation of graphite in the N 2+H 2 atmosphere assisted by a dc glow discharge plasma at a higher gas pressure of about 4.0 kPa. The properties of the thin films are investigated by scanning electron microscopy (SEM), energy-dispersive X-ray (EDX) and X-ray diffraction (XRD). The results show that the deposited films are composed of α-C 3N 4, β-C 3N 4 phase and have the N/C atomic ratio of 2.01. The optical emission spectroscopy (OES) studies indicate that the introduction of a dc glow discharge and the adoption of a higher gas pressure during the film deposition are favorable to the net generation of the atomic N, CN radicals and N + 2 in B 2Σ + u excited state in the plasma, which are considered to play a major role in the synthesis of carbon nitride.