IGZO-based neuromorphic transistors with temperature-dependent synaptic plasticity and spiking logics

被引:0
作者
Ying ZHU
Yongli HE
Chunsheng CHEN
Li ZHU
Changjin WAN
Qing WAN
机构
[1] SchoolofElectronic&ScienceEngineeringandCollaborativeInnovationCenterofAdvancedMicrostructures,NanjingUniversity
关键词
D O I
暂无
中图分类号
TN32 [半导体三极管(晶体管)];
学科分类号
0805 ; 080501 ; 080502 ; 080903 ;
摘要
Temperature is one of the vital influential factors for all physiological and mental activities.Studying the influence of temperature on the properties of synaptic devices is of great importance for neuromorphic computing and bionic perception. Here, indium-gallium-zinc-oxide(IGZO) based electrical-doublelayer neuromorphic transistors were proposed for the emulation of temperature-dependent synaptic functions.The influence of temperature on the synaptic plasticity, including excitatory postsynaptic current, pairedpulse facilitation, and dynamic filtering was investigated. Interestingly, temperature induced spiking AND to OR logic switching was demonstrated in an IGZO-based neuromorphic transistor with two in-plane gate electrodes. Our results provided an insight into the temperature-induced synaptic functions and spiking logic switching, which is interesting for neuromorphic systems with biological fidelity.
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页码:218 / 225
页数:8
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