Electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices

被引：0
|
作者：
商继敏 [1 ]
张帅 [2 ]
王永强 [1 ]
文宏玉 [3 ]
魏钟鸣 [3 ]
机构：
[1] School of Physics and Electronics Engineering Zhengzhou University of Light Industry
[2] College of Physics and Engineering Henan University of Science and Technology
[3] State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences & Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences
来源：
ChineseOpticsLetters | 2019年 / 17卷 / 02期
基金：
中国国家自然科学基金;
关键词：
Zr; SnS; Electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices; der;
D O I：
暂无
中图分类号：
TN15 [光电器件、光电管]; TB34 [功能材料];
学科分类号：
0803 ; 080501 ;
摘要：
The electronic and optical properties of the ZrS;/SnS;van der Waals heterostructure have been investigated.We find out that the formed heterostructure has an intrinsic type-I band alignment. Moreover, the characteristics of optical absorption in the heterostructure can be enhanced to the amount of 106 in the ultraviolet light region. In addition, the tuning electronic properties of ZrS;/SnS;heterostructure are very interesting, due to the transitions from type-I to type-II band alignment that can occur by applying an external electric field.These results suggest that the atomically thin materials ZrS;/SnS;heterostructure will be utilized for flexible optoelectronic applications.
引用
收藏
页码：46 / 50
页数：5
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