C-V Characterization in MOS Structure Inversion Layer Including Quantum Mechanical Effects

A simplified method to calculate the band bending and subband energy is presented to investigate the Quantum Mechanical Effects (QMEs) in MOS structure inversion layer. The method is fairly unique compared with the published methods in the reversed nature of the iteration procedure. It has high efficiency and good convergence characteristics. Gate capacitance in MOS structure inversion region is formulated in both quantum mechanical cases and semi\|classical cases and Quantum Mechanical Effects on gate capacitance have been analyzed. Results of different substrate doping levels are compared and the substrate doping concentration dependence of QMEs on gate capacitance is studied. It is shown that QMEs lead to a substantial decrease in gate capacitance in the strong inversion region. Results of different substrate doping levels indicate that the QMEs on gate capacitance are different substantially in the threshold region at different substrate doping levels but almost the same in the strong inversion region.