Structural and optical properties of Zn-doped β-Ga;O;films

被引：2
|
作者：
岳伟 [1 ]
闫金良 [1 ]
吴江燕 [1 ]
张丽英 [1 ]
机构：
[1] School of Physics,Ludong University
来源：
半导体学报 | 2012年 / 33卷 / 07期
基金：
中国国家自然科学基金;
关键词：
transparent conductive oxides; Zn-dopedβ-Ga2O3; optical transmittance; optical band gap; photoluminescence;
D O I：
暂无
中图分类号：
O484.1 [薄膜的生长、结构和外延];
学科分类号：
080501 ; 1406 ;
摘要：
Intrinsicβ-Ga;O;and Zn-dopedβ-Ga;O;films were prepared using RF magnetron sputtering.The effects of the Zn doping and thermal annealing on the structural and optical properties are investigated.In comparison with the intrinsicβ-Ga;O;films,the microstructure,optical transmittance,optical absorption,optical energy gap,and photoluminescence of Zn-dopedβ-Ga;O;films change significantly.The post-annealedβ-Ga;O;films are polycrystalline.After Zn doping,the crystallization deteriorates,the optical band gap shrinks,the transmittance decreases and the UV,blue,and green emission bands are enhanced.
引用
收藏
页码：20 / 23
页数：4
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