Field Emission Properties of Nitrogen-doped Amorphous Carbon Films

被引：0
|
作者：
LI Hui jun
机构：
来源：
Semiconductor Photonics and Technology | 2002年 / 04期
关键词：
Field emission; Amorphous carbon; Magnetron sputtering;
D O I：
暂无
中图分类号：
O484.4 [薄膜的性质];
学科分类号：
摘要：
Nitrogen doped amorphous carbon thin films are deposited on the ceramic substrates coated with Ti film by using direct current magnetron sputtering technique at N 2 and Ar gas mixture atmosphere during deposition. The field emission properties of the deposited films have been investigated. The threshold field as low as 5.93 V/μm is obtained and the maximum current density increases from 4 μA/cm 2 to 20.67 μA/cm 2 at 10.67 V/μm comparing with undoped amorphous film. The results show that nitrogen doping plays an important role in field emission of amorphous carbon thin films.
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页码：242 / 245
页数：4
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