A Ka-band low-noise amplifier with a coplanar waveguide(CPW)structure with 0.15-μm GaAs pHEMT technology

被引：1

作者：

吴家松 ^{[1
]}

张建煌 ^{[1
]}

刘兴中 ^{[1
]}

林泰勇 ^{[1
]}

吴宪明 ^{[2
]}

机构：

[1] Department of Electronic Engineering,Vanung University

[2] Materials & Electro-Optics Research Division,Chung-Shan Institute of Science & Technology

来源：

半导体学报 | 2010年 / 31卷 / 01期

关键词：

LNA; Ka-band; CPW; GaAs pHEMT; MMIC;

D O I：

暂无

中图分类号：

TN722.3 [低噪声放大器];

学科分类号：

080902 ;

摘要：

<正>This investigation explores a low-noise amplifier（LNA） with a coplanar waveguide（CPW） structure,in which a two-stage amplifier is associated with a cascade schematic circuit,implemented in 0.15-μm GaAs pseudomorphic high electron mobility transistor（pHEMT） technology in a Ka-band（26.5-40.0 GHz） microwave monolithic integrated circuit（MMIC）.The experimental results demonstrate that the proposed LNA has a peak gain of 12.53 dB at 30 GHz and a minimum noise figure of 3.3 dB at 29.5 GHz,when biased at a Vds of 2 V and a Vgs of -0.6 V with a drain current of 16 mA in the circuit.The results show that the millimeter-wave LNA with coplanar waveguide structure has a higher gain and wider bandwidth than a conventional circuit.Finally,the overall LNA characterization exhibits high gain and low noise,indicating that the LNA has a compact circuit and favorable RF characteristics.The strong RF character exhibited by the LNA circuit can be used in millimeter-wave circuit applications.

引用

页码：69 / 72

页数：4

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