Experimental study on heavy ion single-event effects in flash-based FPGAs

被引：0

作者：

ZhenLei Yang ^{[1
,2
]}

XiaoHui Wang ^{[1
]}

Hong Su ^{[1
]}

Jie Liu ^{[1
]}

TianQi Liu ^{[1
]}

Kai Xi ^{[1
,2
]}

Bin Wang ^{[1
,2
]}

Song Gu ^{[1
,2
]}

QianShun She ^{[1
]}

机构：

[1] Institute of Modern Physics, Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

来源：

NuclearScienceandTechniques | 2016年 / 27卷 / 01期

关键词：

Single-event effects(SEEs); Flash-based FPGAs; HIRFL; Heavy ion experiments;

D O I：

暂无

中图分类号：

TN791 [];

学科分类号：

080902 ;

摘要：

With extensive use of flash-based field-programmable gate arrays(FPGAs) in military and aerospace applications, single-event effects(SEEs) of FPGAs induced by radiations have been a major concern. In this paper, we present SEE experimental study of a flash-based FPGA from Microsemi Pro ASIC3 product family. The relation between the cross section and different linear energy transfer(LET) values for the logic tiles and embedded RAM blocks is obtained. The results show that the sequential logic cross section depends not too much on operating frequency of the device. And the relationship between 0 →1 upsets(zeros) and 1 →0 upsets(ones) is different for different kinds of D-flip-flops. The devices are not sensitive to SEL up to a LET of 99.0 Me V cm2/mg.Post-beam tests show that the programming module is damaged due to the high-LET ions.

引用

页码：36 / 43

页数：8

共 6 条

[1]

A flexible and robust soft-error testing system for microelectronic devices and integrated circuits[J]. 王晓辉,童腾,苏弘,刘杰,张战刚,古松,刘天奇,孔洁,赵兴文,杨振雷.Nuclear Science and Techniques. 2015(03)

[2] 一种Flash型FPGA单粒子效应测试方法设计及验证 [J].

杨振雷 ;

王晓辉 ;

苏弘 ;

刘杰 ;

杨海波 ;

成科 ;

童腾 .

核技术, 2015, 38 (02) :39-45

[3] Effectiveness and failure modes of error correcting code in industrial 65 nm CMOS SRAMs exposed to heavy ions [J].

童腾 ;

王晓辉 ;

张战刚 ;

丁朋程 ;

刘杰 ;

刘天奇 ;

苏弘 .

NuclearScienceandTechniques, 2014, 25 (01) :49-54

[4]

Angular dependence of multiple-bit upset response in static random access memories under heavy ion irradiation[J]. 张战刚,刘杰,侯明东,孙友梅,苏弘,段敬来,莫丹,姚会军,罗捷,古松,耿超,习凯.Chinese Physics B. 2013(08)

[5]

Experimental study on heavy ion single event effects in SOI SRAMs[J] . Li Yonghong,He Chaohui,Zhao Fazhan,Guo Tianlei,Liu Gang,Han Zhengsheng,Liu Jie,Guo Gang.Nuclear Inst. and Methods in Physics Research, B . 2008 (1)

[6]

An analytical model of the propagation induced pulse broadening (PIPB) effects on single event transient in flash-based FPGAs .2 Sterpone,L,Battezzati,N,Kastensmidt,F. Lima,Chipana,Raul. IEEE Transactions on Nuclear Science . 2011

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