Interface dipole engineering in metal gate/high-k stacks

被引：0
|
作者：
CHU Paul K [1 ]
机构：
[1] Department of Physics and Materials Science, City University of Hong Kong
来源：
Chinese Science Bulletin | 2012年 / 57卷 / 22期
基金：
中国国家自然科学基金;
关键词：
high-k dielectrics; metal gate; interface dipole; MOS stack; effective work function;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors (MOSFETs) in the 45 nm technology node and beyond,there are still many challenges to be solved.Among the various technologies to tackle these problems,interface dipole engineering (IDE) is an effective method to improve the performance,particularly,modulating the effective work function (EWF) of metal gates.Because of the different electronegativity of the various atoms in the interfacial layer,a dipole layer with an electric filed can be formed altering the band alignment in the MOS stack.This paper reviews the interface dipole formation induced by different elements,recent progresses in metal gate/high-k MOS stacks with IDE on EWF modulation,and mechanism of IDE.
引用
收藏
页码：2872 / 2878
页数：7
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